0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 bss79,BSS81 features high dc current gain: 0.1ma to 500 ma. low collector-emitter saturation voltage. absolute maximum ratings ta = 25 parameter symbol bss79 BSS81 unit collector-emitter voltage v ceo 40 35 v collector-base voltage v cbo v emitter-base voltage v ebo v collector current i c ma peak collector current i cm a base current i b ma peak base current i bm ma total power dissipation,t s =77 p tot mw junction temperature t j storage temperature t stg junction - soldering point r thjs k/w 75 6 330 150 -65to+150 220 800 1 200 100 smd type smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type ic smd type transistors h fe classification type rank b c marking ces cfs type rank b c marking cds cgs bss79 BSS81 electrical characteristics ta = 25 symbol testconditons min typ max unit bss79 40 BSS81 35 collector-base breakdown voltage v (br)cbo i c =10a,i e =0 75 v v (br)ebo i e =10a,i c =0 6 v v cb =60v,i e = 0 10 na v cb =60v,i e =0,t a =150 10 a i ebo v eb =3v,i c = 0 10 na bss79/81b 20 bss79/81c 35 bss79/81b 25 bss79/81c 50 bss79/81b 35 bss79/81c 75 bss79/81b 40 120 bss79/81c 100 300 bss79/81b 25 bss79/82c 40 i c =150ma,i b =15ma 0.3 i c =500ma,i b =50ma 1.3 i c =150ma,i b =15ma 1.2 i c =500ma,i b =50ma 2.0 f t i c =20ma,v ce =20v,f=100mhz 250 mhz ccb v cb =10v,f=1mhz 6 pf td v cc =30v,i c =150ma,i b1 =15 ma,v be(off) =0.5v 10 ns tr v cc =30v,i c =150ma,i b1 =15 ma,v be(off) =0.5v 25 ns tstg v cc =30v,i c =150ma,i b1 =i b2 = 15ma 250 ns tf v cc =30v,i c =150ma,i b1 =i b2 =15ma 60 ns * pulse test: t 300s, d = 2%. i c =10ma,v ce =10v ic=500ma,vce=10v i c =100a,v ce =10v i c =1ma,v ce =10v rise time storage time fall time delay time emitter-base breakdown voltage i cbo collector cutoff current base-emitter saturation voltage * v be(sat) emitter cutoff current h fe dc current gain * transition frequency collector-base capacitance i c =150ma,v ce =10v collector-emitter saturation voltage * v ce(sat) v v (br)ceo i c =10ma,i b =0 v parameter collector-emitter breakdown voltage bss79,BSS81 smd type smd type smd type smd type smd type smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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